features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems sga1263z dcto4000mhz silicon germanium hbt cascadable gain block rfmd?s sga1263z is a silicon germanium hbt heterostructure bipolar transistor (sige hbt) amplifier that offers excellent isolation and flat gain response for application to 4ghz. this rfic is a 2-stage design that pro- vides high isolation of up to 40db at 2ghz and is fabricated using the lat- est sige hbt 50ghz f t process, featuring one-micron emitters with v ceo >7v. these unconditionally stable amplifiers have less than 1db gain drift over 125c operating range (-40c to +85c) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ism, and narrowband pcs bands. -80 -60 -40 -20 0 100 500 900 1900 2400 3500 6000 db frequency mhz isolation vs. frequency ? dcto4000mhz operation ? single supply voltage ? excellent isolation, >50db at 900mhz ? 50 ? in/out, broadband match for operation from dc- 4ghz ? unconditionally stable applications ? buffer amplifier for oscillator applications ? broadband gain blocks ? if amp ds111011 ? package: sot-363 sga1263z dcto4000mh z silicon ger- manium hbt cascadable gain block parameter specification unit condition min. typ. max. small signal gain 15 17 19 db 850mhz 12 15 17 db 1950mhz output power at 1db compression -13.0 -9.5 dbm 1950mhz output third order intercept point -1.5 1.0 dbm 1950mhz determined by return loss (<-10db) mhz input return loss 9.5 11.2 db 1950mhz output return loss 7 8 db 1950mhz noise figure 2.5 4.0 db 1950mhz device voltage 2.5 2.8 3.1 v thermal resistance 255 c/w test conditions: v s =5v, i d =8ma typ., oip3 tone spacing=1mhz, p out per tone=-20dbm, r bias =270 ? , t l =25c, z s =z l =50 ?
2 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga1263z absolute maximum ratings parameter rating unit max device current (id) 20 ma max device voltage (vd) 5 v max rf input power -12 dbm max junction temperature (tj) +150 c operating temperature range (tl) -40 to +85 c max storage temperature +150 c operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l parameter specification unit condition min. typ. max. bandwidth t=25c frequency range dc 4000 mhz device bias t=25c operating voltage 2.8 v operating current 8 ma 500mhz t=25c gain 16.0 db noise figure 2.7 db output ip3 4.0 dbm output p1db -6.9 dbm input return loss 8.5 db isolation 61.6 db 850mhz t=25c gain 15.7 db noise figure 2.7 db output ip3 2.6 dbm output p1db -7.8 dbm input return loss 8.9 db isolation 48.4 db 1950 mhz t=25c gain 14.7 db noise figure 3.0 db output ip3 2.8 dbm output p1db -7.4 dbm input return loss 8.8 db isolation 35.6 db 2400 mhz t=25c gain 14.2 db noise figure 2.8 db output ip3 0.2 dbm output p1db -7.0 dbm input return loss 8.4 db isolation 33.6 db caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga1263z application schematic for +5v operation at 900mhz application schematic for +5v operation at 1900mhz pin function description 1gnd connection to ground. use via holes for best performance to reduce lead inductance as close to ground leads as possi- ble. 2gnd same as pin 1. 3rf in rf input pin. this pin requires the ise of an external dc blocking capacitor chosen for the frequency of operation. 4vcc supply connection. this pin should be bypassed with suitable capacitor(s). 5gnd same as pin 1. 6rf out rf output and bias pin. dc voltage is present on this pin, therefore a dc blocking capacitor is necessary for proper oper- ation. 270 100pf 1uf 68pf 100pf 50 microstrip 50 microstrip v cc =+5v 3 4 6 1,2,5 note: a bias resistor is needed for stability over temperature 270 68pf 1uf 22pf 68pf 50 microstrip 50 microstrip v cc =+5v 3 4 6 1,2,5 recommended bias resistor values supply voltage(vs) 3.6v 5v 7.5v 9v 12v rbias (ohms) 100 275 588 775 1150
4 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga1263z -40 -30 -20 -10 0 100 500 900 1900 2400 3500 6000 0 6 12 18 24 100 500 900 1900 2400 3500 6000 -80 -60 -40 -20 0 100 500 900 1900 2400 3500 6000 -40 -30 -20 -10 0 100 500 900 1900 2400 3500 6000 s21, id =8 ma, t=+25c db frequency mhz db db db frequency mhz s12, id =8 ma, t=+25c s22, id =8 ma, t=+25c frequency mhz frequency mhz s11, id =8 ma, t=+25c s11, id=8 ma, ta= +25c s22, id=8 ma, ta= +25c freq. min = 0.1 ghz freq. max = 6.0 ghz freq. min = 0.1 ghz freq. max = 6.0 ghz
5 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga1263z package dimensions pad layout dimensions in inches [millimeters] rf out rf i n notes: 1. provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. dimensions given for 50 ohm rf i/o lines are for 31 mil thick getek. scale accordingly for different board thicknesses and dielectric contants. 3. we recommend 1 or 2 ounce copper. measure- ments for this data sheet were made on a 31 mil thick getek with 1 ounce copper on both sides.
6 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sga1263z part identification marking ordering information ordering code description sga1263z 7" reel with 3000 pieces sga1263zsq sample bag with 25 pieces sga1263zsr 7? reel with 100 pieces SGA1263Z-EVB1 850mhz, 5v operation pcba 1 2 3 6 5 4
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